Devices with electrical contacts are required for many aspects of graphene research. These so called graphene field effect transistors (GFETs) have been fabricated and characterized by AMO since 2005. For our standard GFETs exfoliated graphene on thermally oxidized silicon is used. The electrical contacts are fabricated by contact lithography and sputter deposition of nickel using the lift-off process. The highly doped silicon substrate with the thermal oxide layer is used as back-gate for control of the charge carrier density.

Besides, a wide spectrum of further CMOS typical process technologies and materials is available in our cleanroom. This allows the fulfillment of nearly any customer requirement. Please find an overview of alternative substrates, contact metals and dielectrics in the table below. We are pleased to advise and assist you with your tailored solution. Please contact our graphene team at szafranek(at)amo.de.