Interference lithography is an optical nanolithography technology for the fabrication of extensive periodic nanostructures. Critical dimensions of less than 50 nm can be realised.

At AMO two interference lithography systems are installed. One setup for extensive and fixed periods and one adjustable setup for small exposure area.

We offer grating fabrication on silicon, silicon dioxide and other substrates with tailored pitch, etch depth and size.

The exposure of 6" (150 mm) wafers requires a large optical table (2,5m x 4m), robust optical components and active fringe stabilisation to compensate unavoidable vibration and noise causing phase modulation in the interferometer.

AMO solved these problems and operates a 266 nm beam line with a fringe stabilisation system based on a digital PID controller.