Field Effect Transistors from Graphene Nanoribbons
New results on Graphene Nanoribbons are presented in the paper “Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons”, a collaboration between AMO, RWTH Aachen University, University of Cologne and UC Berkeley. The work has recently been published in ACS Applied Materials Interfaces.
The AMO researchers and their colleagues experimentally demonstrated back-gated transistors fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons.
The channel length of the FET (1 µm) is approximately 30 times of the individual ribbon length (30 – 40 nm). Despite this, the devices exhibit a maximum ION/IOFF current ratio of 87.5. The electrical transport can be assumed well above the percolation threshold due to dense array of the synthesized GNRs.
The research is the result of several funded research projects, among them two ERC grants 648589 “SUPER-2D” and 307311 “InteGraDe”, German Research Foundation grants (DFG GR 3708/2-1 and LE 2440/2-1) as well as the European Regional Fund project “HEA2D” (NW-1-1-036b ).