AMO

How to report and benchmark emerging field-effect transistors

One of the challenges encountered by research on novel electronic devices is to compare devices based on different materials in a consistent way. RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have now proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have been published as a Perspective Article in Nature Electronics. [read more »]

Healing Achilles heel of two-dimensional transistors

Stability – in the sense of stable operation thorough lifetime – is one of the key characteristics that an electronic device need to present to be suitable for applications. And it is the Achilles heel of transistors based on two-dimensional materials, which typically show much worse stability than devices based on silicon. A team of researchers from TU Wien, AMO GmbH, RWTH Aachen University and Wuppertal University has now demonstrated a novel engineering approach to enhance the electrical stability of two-dimensional transistors by carefully tuning the Fermi energy. The results have been reported in Nature Electronics. [read more »]