2nd Workshop on „2D Materials for Future Electronics“

Preliminary Program

Tuesday, March 3, 2026

12:00 – 14:30 – Registration & Lunch

SuperC – RWTH Aachen University
Templergraben 57
52062 Aachen

6th Floor, Foyer

Jean-Francois Dayen (Université de Strasbourg)

Title: tba

Abstract: tba

Gianluca Fiori (Università di Pisa)

2D Materials as a Platform for Next-Generation devices and Conformable Electronics

Two-dimensional (2D) materials combine atomic-scale thickness with excellent electrostatic control, making them strong candidates for extending logic technologies beyond the 2 nm node. At the same time, their mechanical flexibility and compatibility with low-temperature processes enable ultra-thin and conformable electronic systems. In this talk, I will present the aims and the goals of the 2D-ADDICT project, focusing on device engineering, and circuit-level assessment of 2D-based nanosheet architectures. I will also discuss integration strategies for ultra-flexible and lightweight electronics. Together, these directions position 2D materials as a versatile platform bridging extreme scaling and unconventional electronic applications.

Sergi Abadal (Universitat Politècnica de Catalunya)

New Frontiers for Communications and Computing with 2D Materials

Communications and computing are two intricately intertwined functionalities in our hyperconnected and AI-driven world, to the point that, from small edge processors to large supercomputing platforms, progress is only possible if both aspects are optimized together. In this context, two-dimensional materials (2DMs) hold the key to disruptive potential as they can deliver important gains in the performance, efficiency, and size of the fundamental building blocks of communication and computing systems. In this talk, we will first provide an overview of the advances on the development of key 2DM-based devices and circuits for communications and computing, to then focus on recent works about graphene plasmonic antennas and 2DM-based memristors as two illustrative examples. We will discuss not only the device characteristics and performance, but also their potential to transform communications and computing.

16:00 – 17:00 – Coffee Break

 Inge Asselberghs (imec)

Title: The 2D-Pilot Line: an Update

Gordon Rinke (AMO GbnH)

Title: Introducing the latest MPW run at AMO

Nadine Collaert (imec)

The Good, The Bad, and The MX2: Benchmarking 2D Materials Against the Semiconductor Giants

2D materials like MX2 offer transformative potential for logic, memory, RF and optical applications and even beyond that, due to their exceptional electrostatic control and carrier mobility. However, the path to commercial compute and connectivity is blocked by entrenched incumbents: silicon FinFET, GAA, and CFET architectures, alongside III-V devices, emerging optical technologies and 3D integration techniques. This presentation evaluates the competitive gap, identifying the „ugly“ realities of large-scale synthesis, contact resistance, gate stack, and thermal management. By benchmarking 2D performance against current industry roadmaps, we define the critical milestones required for these atomic-scale layers to transition from laboratory curiosities to indispensable components in the global semiconductor ecosystem.

Mikka Soikkeli (VTT)

2D Material Integration on Si CMOS Back-End-of-Line for Sensors

Abstract: tba

18:15 – 21:00 – Poster Session & Dinner

Wednesday, March 4, 2026

Dmitry Polyushkin (TU Wien)

Encapsulated hBN/MoS₂/hBN FETs for 2D Electronics

Two-dimensional semiconductors like MoS₂ are widely seen as promising materials for future electronics, but in practice their performance is often limited by disorder, charge trapping, and exposure to the environment. In this talk, we present the field-effect transistors based on fully encapsulated hBN/MoS₂/hBN heterostructures, which create a much more stable environment for the 2D channel. We show that hBN encapsulation leads to clear improvements in electrical stability compared to non-encapsulated MoS₂ transistors. The influence of encapsulation on contact resistance, subthreshold behavior, and hysteresis will be discussed. Overall, our results point to hBN-encapsulated MoS₂ FETs as a promising and scalable route toward high-performance 2D electronics.

Anibal Pacheco (Universidad de Granada)

Graphene devices for energy-efficient radio-frequency electronics

Emerging radio-frequency applications have been enabled by the rapid progress of graphene technology over the past two decades. This presentation reviews the modeling as well as the linear and nonlinear characterization of microwave graphene transistors and metal-insulator-graphene diodes fabricated at AMO GmbH within European initiatives such as the 2D Experimental Pilot Line or INFRACHIP. We further discuss the performance of graphene-based RF circuits, including frequency multipliers, reconfigurable applications (amplifiers/phase-shifters), and detectors. Particular emphasis is placed on the low-power consumption of the graphene-based devices and circuits, together with the accurate evaluation of their figures-of-merit for RF rectifying applications enabled by a nonlinear characterization. An overview of the collaboration between UGR and AMO GmbH within the INFRACHIP initiative is also presented, covering device modeling, circuit and layout design, towards obtaining microwave monolithic integrated circuits based on state-of-the art graphene technology for RF applications.

Johan Liu (Chalmers University of Technology)

Title: tba

Abstract: tba

Sarah Riazimehr (Oxford Instruments)

From Surface Cleaning to Dielectric Integration: Plasma-Enhanced ALD on 2D Materials

The integration of two-dimensional materials into functional devices is fundamentally limited by challenges related to surface and interface quality. Surface contamination introduced during transfer and patterning degrades performance, while the inherently thin and sensitive nature of 2D layers makes them particularly vulnerable to damage during dielectric deposition using conventional techniques.

To address these challenges, in this talk, we present an in-situ approach using an Oxford Instruments plasma-enhanced ALD system that integrates controlled surface engineering with low-damage dielectric deposition, enabling continuous in-situ processing while preserving the intrinsic properties of 2D materials.

10:45 – 11:30 – Coffee Break

Jinxin Liu (TU Dresden)

2D conjugated metal-organic frameworks towards monolithic 3D integration

Monolithic three-dimensional (3D) integration based on vertically stacked two-dimensional (2D) materials offers a compelling alternative to conventional planar integrated circuits, enabling higher integration density while reducing interconnect latency and power consumption and, ultimately, expanding functionality beyond Moore’s scaling. A central prerequisite for industrial translation is the controllable, wafer-scale synthesis of high-quality 2D active layers under low thermal budgets (<400 °C). However, widely used inorganic 2D materials, such as MoS2, graphene, and h-BN, are governed by strong covalent bonding; achieving high crystallinity typically requires high growth temperatures to overcome substantial reaction barriers and to enable reversible bond breaking/forming, thereby challenging to make wafer-scale high-quality films at low temperatures.

In contrast, 2D conjugated metal–organic frameworks (2D c-MOFs) are assembled from π-conjugated organic linkers and metal nodes through coordination chemistry, which is thermodynamically favorable and generally characterized by low kinetic barriers. As a result, 2D c-MOFs can be formed at intrinsically low temperatures (often <200 °C) while offering rich and tunable charge-transport behaviors enabled by in-plane π–d conjugation. These features make them promising building blocks for monolithic, multifunctional integration. In this talk, I will present our efforts to establish chemical vapor deposition (CVD) as a scalable route to large-area, uniform 2D c-MOF thin films with device-relevant crystallinity and ultrasmooth surfaces. I will further discuss how such vapor-grown films can be directly integrated into electronic platforms, highlighting high-performance device demonstrations including photodetectors, and outlining key structure–property relationships that guide the design of 2D-c-MOF-based electronic units for low-temperature 3D integration. [/av_toggle] [av_toggle title='12:00 - 12:30 - Susanne Hoffmann-Eifert (Forschungszentrum Jülich)' title_open='' tags='' title_pos='' slide_speed='' custom_id='' aria_collapsed='' aria_expanded='' av_uid='av-ml9i0q5i' sc_version='1.0'] Susanne Hoffmann-Eifert (Forschungszentrum Jülich)

Title: tba

Abstract: tba

 Susanne Hoffmann-Eifert (Research Center Jülich)

Volatile ECM Cells from MOCVD-grown h-BN Layers for Neuromorphic Applications

Volatile-switching electrochemical metallization memory (v-ECM) cells show interesting properties for selector and neuromorphic computing applications, such as for example spiking neural networks (SNN) and leaky-integrated-and-fire (LIF) circuits. For the computation by dynamics and time new technologies for devices with high dynamics are required [1]. Among the various threshold-type devices, v-ECM also known as diffusive memristor is very promising [2]. The device switches from the high-resistance to the low-resistance state when the voltage rises above the threshold voltage and automatically restores the high-resistance state after a relaxation time when the voltage falls below the holding voltage. The advantage of v-ECMs compared to insulator-to-metal-based threshold switches is their extremely low leakage current and the low threshold voltages, while a drawback is the higher switching variability. In previous studies, we have investigated the SET kinetics and relaxation dynamics of v-ECM threshold switches based on Ag/HfO2/Pt crossbar devices and demonstrated a correlation between the relaxation time and the operating parameters with reference to the SET kinetics [3,4].

This work focuses on the use of h-BN layers as the switching matrix in v-ECM devices. The h-BN layers were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD) in an AIXTRON CCSÒ reactor using triethylboron, ammonia and hydrogen as precursors. The influence of the growth conditions on the thin films’ structure and morphology was carefully analysed. Crossbar devices with Ag/h-BN/Pt structure were fabricated from transferred h-BN layers with thickness as low as 3 nm. The electrical properties and the resistive switching performance of the fabricated devices are discussed in the light of the thin films’ morphology. Finally, consequences for the desired material properties for reliable and reproducible switching devices are discussed.

References

[1] M. Dutta et al., Adv. Electron. Mater. 2024, 10, 2400221.

[2] Z. Wang, et al., Nature Mater 2017, 16, 101–108.

[3] S. Chekol et al., Adv. Funct. Mater. 2022, 32, 2111242

[4] S. Chekol et al., Adv. Electron. Mater. 2022, 8, 2200549.

Zhenxing Wang (AMO GmbH)

Wafer-Scale Integration of 2D Materials

Two-dimensional (2D) materials, including graphene and transition metal dichalcogenides (TMDCs), offer exceptional electrical, optical, and mechanical properties, yet their integration at the wafer scale remains a major bottleneck for large-scale deployment. This talk will examine the fundamental and technological challenges associated with incorporating 2D materials into established semiconductor platforms, such as scalable growth, transfer, interface control and so on. We will discuss current approaches and solutions enabling wafer-scale integration, followed by representative case studies demonstrating their impact on electronic and sensing applications.

13:00 – 14:00 – Lunch & Departure

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MORE INFO & REGISTRATION

To attend the workshop, please register on the following page: https://www.amo.de/de/events/2nd-workshop-on-2d-materials-for-future-electronics/
Participation is free and open to everybody. The total number of participants is limited, places will be allocated on a first-come, first-served basis.

Registration deadline: February 14, 2026.

FUNDING

The workshop is financially supported by the European Union via the projects 2D-ADDICT, 2D-PL, CERBERUS, and ENERGIZE, as well as by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation), via the Collaborative Research Center/Transregio TRR404 „Next Generation Electronics With Active Devices in Three Dimensions [Active-3D]“, and by the the BMFTR through the Cluster4Future NeuroSys and the project MoS2FET (grant number 01DK24018, part of the „Förderung von Projekten zum Thema Forschungs- und Entwicklungszusammenarbeit zwischen Deutschland und der Ukraine”). A sponsorhip by Oxford Instruments Plasma Technology is also acknowledged.