01.04.2025 — 31.12.2028
Active-3D TRR404-A07
Vertical Perovskite Field-Effect Transistors
Förderer Funding Agency: DFG
Förderkennzeichen Grant ID: TRR404
Collaborative Research Center/Transregio „Active-3D“
The TRR404 „Next Generation Electronics With Active Devices in Three Dimensions [Active-3D]“ is a DFG-funded Collaborative Research Center/Transregio between Dresden University of Technology (TUD) and Rheinisch-Westfälische Technische Hochschule Aachen (RWTH Aachen). It aims at exploring a completely new approach for microelectronics technology, by integrating active devices into the Back-End of Line (BEOL), providing logic, memory, and active interconnect functionality directly above the chip area
Active-3D brings together material scientists, electrical engineers, and computer scientists of TUD, RWTH Aachen and Gesellschaft für Angewandte Mikro- und Optoelektronik mbH (AMO) in Aachen, Forschungszentrum Jülich (FZJ), Max Planck Institute of Microstructure Physics Halle (MPI-MSP), Nanoelectronic Materials Laboratory gGmbH (NaMLab) in Dresden, and Ruhr-Universität Bochum (RUB).
Project A07 – Vertical Perovskite Field-Effect Transistors
For high frequency applications a vertical device architecture with very small dimensions is more beneficial compared to lateral device architectures. Perovskite materials have had great success in the field of improved solar cells. However, their application to other semiconductor devices is not explored in the same way. They offer distinct benefits in terms of integration technology for the BEOL. Based on the leading activities in perovskite solar cells at TUD and the integration know-how at AMO (M. Mohammadi), here a novel, vertical device concept utilizing perovskites will be at the center of the research. Within the TRR the project will demonstrate the concept in Phase 1 and supply vertical devices with medium to high performance.
Project’s Principal Investigators: Dr. Maryam Mohammadi (AMO GmbH), Prof. Yana Vaynzof (TU Dresden).
