A scalable approach for MoS 2-field-effect transistors with low contact resistance
Researchers from AMO GmbH and the Chair for Electronic Devices at RWTH Aachen University have experimentally demonstrated a scalable technique for realizing field-effect transistors based on two-dimensional molybdenum disulfide (MoS2), with low contact resistance (about 9 kΩ·µm) and high on/off current ratios of 108.
Schematic of the device. LSLG describes the length of the SLG/MoS2 heterostructure and Lch defines the channel of the transistor.
The approach is based on lateral heterostructures of MoS2 and single-layer graphene – both grown with scalable methods – and exploiting one-dimensional edge contacts between graphene and metallic nickel contacts.
Theoretical simulations calibrated on the experiments further indicate that the approach can be successfully scaled down to the nanometer range, and that substantial performance enhancement can be achieved by means of layer optimizations, e.g. . by direct growth processes or cleaner transfers processes to improve the interfaces of heterostructure.
The work is the result of the collaboration with the groups of Gianluca Fiori and Francesco Iannacone from the University of Pisa, the group of Andras Kis at EPFL, Enrique González Marín at the University of Granda, and Daniel Neumaier at the University of Wuppertal. The results have been reported open access in the journal npj 2D Materials and Applications.
This research has received funding from the European Union through the Horizon 2020 research and innovation program through the projects QUEFORMAL and Graphene Flagship, from the German Research Foundation (DFG) through the projects MOSTFLEX, ULTIMOS2, and INST 221/96-1, as well as from the German Ministry of Education and Research (BMBF) projects through the projects NeuroTec II and the NeuroSys Cluster.
Bibliographic Information
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors
Daniel S. Schneider, Leonardo Lucchesi, Eros Reato, Zhenyu Wang, Agata Piacentini, Jens Bolten, Damiano Marian, Enrique G. Marin, Aleksandra Radenovic, Zhenxing Wang, Gianluca Fiori, Andras Kis, Giuseppe Iannaccone, Daniel Neumaier & Max C. Lemme
npj 2D Materials and Applications volume 8, Article number: 35 (2024)
DOI: https://doi.org/10.1038/s41699-024-00471-y
