Scalable Dielectric Integration on Graphene for Next-Generation Electronic Devices

As part of the European research initiative 2D Experimental Pilot Line (2D-EPL), now known as 2D-PL and integrated into the Graphene Flagship Initiative, a major breakthrough has been achieved in the scalable integration of graphene into electronic devices. In a recent publication in Materials Science in Semiconductor Processing, researchers from AMO GmbH and Oxford Instruments plc present an innovative approach for depositing aluminum oxide (Al₂O₃) on graphene using plasma-enhanced atomic layer deposition (PEALD).

The key advancement lies in the use of an in situ-deposited AlOX interlayer, which protects the sensitive graphene surface during the deposition process. This thin, nonstoichiometric layer enables high-quality dielectric growth without breaking vacuum—an essential requirement for industrial scalability.

The results are impressive: dielectric strength exceeding 11 MV/cm, an equivalent oxide thickness (EOT) below 5 nm, confirmed preservation of graphene integrity via Raman spectroscopy, uniform deposition across 150 mm wafers, and enhanced performance of graphene field-effect transistors (GFETs). This process addresses a critical challenge in integrating graphene into next-generation semiconductor technologies and marks a significant milestone for the 2D-PL initiative.

The publication, titled Plasma-enhanced atomic layer deposition of Al₂O₃ on graphene via an in situ-deposited interlayer, was authored by Sarah Riazimehr, Ardeshir Esteki, Martin Otto, Michael Powell, Gordon Rinke, Bianca Robertz, Zhenxing Wang, Max Lemme, Katie Hore, and Harm Knoops. It highlights the successful collaboration between AMO GmbH and Oxford Instruments plc and demonstrates the potential of 2D materials for future electronic applications.