Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

 

🎉 Congratulations to Sofia Cruces (ELD) for the publication of her latest paper in ACS Publications‘ Nano Letters: “Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices”.

This exciting work explores the coexistence of volatile and nonvolatile resistive switching in lateral MoS₂-based memristors with silver electrodes. The devices operate at low switching voltages (~0.16 V and ~0.52 V) and demonstrate essential synaptic behaviors such as paired-pulse facilitation and both short- and long-term plasticity.

Using in situ transmission electron microscopy, the team observed lateral migration of silver ions as the switching mechanism—supported by a macroscopic semiclassical electron transport model.

👏 Co-authors:

Mohit Ganeriwala, Jimin Lee, Ke Ran, Janghyun Jo, Lukas Völkel, Dennis Braun, Bárbara Canto, Enrique G. Marín, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal Dunin-Borkowski, Joachim Mayer, Andres Godoy, Alwin Daus, and Max Lemme

Lehrstuhl für Elektronische Bauelemente (ELD) RWTH Aachen University

💡 Funded by:

German Federal Ministry of Education and Research (BMBF) through the projects NEUROTEC 2 & NeuroSys Cluster, EU Horizon Europe under the ENERGIZE Project, Deutsche Forschungsgemeinschaft (DFG) – German Research Foundation through the Emmy Noether Programme, and the Spanish Government through the projects RECAMBIO, ADAGE, FlexPowHar funded by MCIN/AEI/10.13039/501100011033 and the European Union NextGenerationEU/PRTR.

📄 Read the full paper open access here.