Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
🎉 Congratulations to Sofia Cruces (ELD) for the publication of her latest paper in ACS Publications‘ Nano Letters: “Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices”.
This exciting work explores the coexistence of volatile and nonvolatile resistive switching in lateral MoSâ‚‚-based memristors with silver electrodes. The devices operate at low switching voltages (~0.16 V and ~0.52 V) and demonstrate essential synaptic behaviors such as paired-pulse facilitation and both short- and long-term plasticity.
Using in situ transmission electron microscopy, the team observed lateral migration of silver ions as the switching mechanism—supported by a macroscopic semiclassical electron transport model.
đź‘Ź Co-authors:
Mohit Ganeriwala, Jimin Lee, Ke Ran, Janghyun Jo, Lukas Völkel, Dennis Braun, Bárbara Canto, Enrique G. MarĂn, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal Dunin-Borkowski, Joachim Mayer, Andres Godoy, Alwin Daus, and Max Lemme
Lehrstuhl fĂĽr Elektronische Bauelemente (ELD) RWTH Aachen University
đź’ˇ Funded by:
German Federal Ministry of Education and Research (BMBF) through the projects NEUROTEC 2 & NeuroSys Cluster, EU Horizon Europe under the ENERGIZE Project, Deutsche Forschungsgemeinschaft (DFG) – German Research Foundation through the Emmy Noether Programme, and the Spanish Government through the projects RECAMBIO, ADAGE, FlexPowHar funded by MCIN/AEI/10.13039/501100011033 and the European Union NextGenerationEU/PRTR.
