Intermediate Resistive State in Wafer-Scale Vertical MoS₂ Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
AMO GmbH is pleased to announce the publication of a new scientific study in Advanced Functional Materials. The work, titled “Intermediate Resistive State in Wafer-Scale Vertical MoS₂ Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications” and led by Yuan Fa, presents a significant advancement in the development of two‑dimensional memristors for future neuromorphic electronics. In this study, the research team demonstrates vertical Ag/MoS₂/Pd memristors fabricated entirely at wafer scale, which exhibit highly reliable and energy‑efficient operation. The devices show both volatile and non‑volatile switching at low operating voltages of ±1 volt, a highly reproducible intermediate resistive state with a yield of 98 percent, and impressive stability over more than 2,500 switching cycles as well as retention times exceeding one million seconds. Moreover, the memristors enable synaptic plasticity on the microsecond scale, making them particularly attractive for neuromorphic hardware systems.
A key outcome of the study is the identification of the physical mechanism behind the observed intermediate state: it originates from lateral growth of silver filaments within the van der Waals gaps of MoS₂. This insight provides a deeper understanding of ion transport processes in two‑dimensional memristors and opens important perspectives for the targeted optimization of such devices. The combination of wafer‑scale manufacturability, high reliability, and biologically inspired switching characteristics underscores the potential of this technology for future artificial neural networks and energy‑efficient information processing.
AMO GmbH congratulates all contributing authors including Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofia Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, and Max Lemme on this outstanding achievement. The work was supported by the Federal Ministry for Research, Technology and Space within the NeuroSys Cluster and NEUROTEC 2 projects, by the EU Horizon Europe program (CHIPS‑JU) through the ENERGIZE project, and by the German Research Foundation (DFG) within the Priority Program SPP2262 MEMMEA (MemrisTec). These results further strengthen the leading role of AMO and its partners in the exploration of innovative nanoelectronic technologies and make a substantial contribution to the advancement of neuromorphic hardware architectures.
