New Publication on Advanced TS Devices
AMO is pleased to announce the publication of a new scientific study in Advanced Electronic Materials, to which our team has made a significant contribution. First author Jimin Lee, together with co‑authors Rana Walied Ahmad, Sofia Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus and Max Lemme, presents important findings on improving threshold‑switching devices.
The article “Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS₂” demonstrates how combining SiOx with vertically aligned MoS₂ (VAMoS₂) enhances the performance and reliability of these devices. The results are particularly relevant for emerging memory technologies and neuromorphic systems.
The investigated SiOx/VAMoS₂ heterostructures achieve higher on‑threshold and hold voltages of around 0.4 volts, enable switching times down to 356 nanoseconds under a 4‑volt pulse, and exhibit a significantly reduced cycle‑to‑cycle variability of only 3 percent. Moreover, the transport of silver ions is guided through the van der Waals gaps of VAMoS₂, resulting in controlled and reproducible filament formation.
A variability‑aware physical model explains how ion dynamics within these gaps contribute to more stable switching behavior. This heterostructure architecture therefore represents a promising approach for reliable vertical TS devices.
The work was carried out in collaboration with the Chair of Electronic Devices (ELD) at RWTH Aachen University, Forschungszentrum Jülich and the University of Stuttgart.
The project received funding from the German Federal Ministry of Research, Technology and Space through the NEUROTEC project and the NeuroSys Cluster, from the European Union’s Horizon Europe programme within the ENERGIZE project, and from the German Research Foundation through SPP MemrisTec and the Emmy Noether Programme.
AMO congratulates Jimin Lee and all contributors on this significant publication and their contribution to advancing next‑generation electronics.
📄 Read the full paper: https://doi.org/10.1002/aelm.202500800
