New Publication on MoS₂ Memristors in Advanced Electronic Materials
We are pleased to present our latest publication in the journal Advanced Electronic Materials. The paper, titled “Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS₂ Memristors,” was authored by our colleague Dennis Braun together with a strong international team of researchers.
The study systematically investigates how different electrode materials, including palladium, nickel, and aluminum, as well as various deposition techniques, influence the switching behavior of MoS₂ based memristors. The results clearly demonstrate that both the choice of material and the fabrication method have a significant impact on the resistive switching characteristics of the devices.
The findings suggest that the underlying mechanism is based on the formation of conductive filaments through electrochemical metallization. Particularly noteworthy is the performance of aluminum electrodes. When deposited using sputtering techniques, they show improved behavior by avoiding unwanted oxide formation, highlighting aluminum as a promising active electrode material for this device architecture.
This work is the result of close collaboration between RWTH Aachen University, AMO GmbH, and AIXTRON SE, emphasizing the importance of interdisciplinary cooperation in the development of novel electronic materials and devices.
We warmly congratulate Dennis Braun and all contributing authors on this successful publication.
We also gratefully acknowledge the support of our funding partners, including the German Federal Ministry of Research, Technology and Space through the NeuroTec project and the NeuroSys Cluster, as well as the European Union under the Horizon Europe programme via the Chips Joint Undertaking in the ENERGIZE project.
