New publication in Nature Communications on how to measure the adhesion of 2D materials

One of the big selling points of two-dimensional (2D) materials is their self-passivated nature, which allows them to be deposited on any substrate and opens up new possibilities for three-dimensional material stacks. The downside is their weak adhesion to the substrate, which can be a source of device instability. Quantifying the adhesion of 2D materials […]

schematics of the fabrication process of the flexible strain sensors and of their possible applications.

Towards self-healing flexible strain sensors based on graphene ink

Advanced applications such as smart patches and electronic skin have created the need for strain sensors that are not only sensitive and flexible, but also skin- and eco-friendly, and ideally self-healing, i.e. able to recover their sensing performance after damage.  A successful strategy for implementing self-healing strain sensors is to combine a polymer with good […]

Conduction and switching mechanisms in boron-nitride threshold memristors with nickel electrodes

Researchers from RWTH Aachen University, AMO GmbH and Research Center Jülich have performed a detailed study of hBN based threshold memristors with nickel electrodes. Analyzing temperature-dependent transport measurements and high-resolution TEM images, they propose the formation and retraction of nickel filaments along boron defect in the h-BN film as the resistive switching mechanism. The study […]

How to report and benchmark emerging field-effect transistors

RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have been published as a Perspective Article in Nature Electronics.

Healing Achilles heel of two-dimensional transistors

Researchers from TU Wien, AMO GmbH, RWTH Aachen University and Wuppertal University have demonstrated a novel approach to enhance the electrical stability of two-dimensional transistors.

2D materials for next generation computing

In a compact comment published in Nature Communications, Max Lemme and colleagues outline the most promising fields of applications of two-dimensional (2D) materials, as well as the challenges that still need to be solved to see the appearance of high-tech products enabled by 2D-materials.

A new paradigm of THz-energy harvester based on graphene

Researchers from AMO GmbH, RWTH Aachen University, Chalmers University and the University of Wuppertal have developed a novel type of flexible energy harvester that shows good prospects for powering wearable and conformal devices. The work has been published open-access on ACS Applied Electronic Materials.

A scalable method for the large-area integration of 2D materials

Two-dimensional (2D) materials have a huge potential for providing devices with much smaller size and extended functionalities with respect to what can be achieved with today’s silicon technologies. But to exploit this potential we must be able to integrate 2D materials into semiconductor manufacturing lines – a notoriously difficult step. A team of researchers from […]

Combining high responsivity and low power consumption in graphene-based photodetectors

Researchers from AMO GmbH, ICFO- Institut de Ciencies Fotoniques, RWTH Aachen University, and Bergishe Universität Wuppertal have developed a novel approach for graphene-based photodetectors that allows combining high responsivity and low power consumption, thus circumventing one of the major limitations of state-of-the-art photodetectors based on graphene – namely the high power-consumption caused by their large […]

The first operational amplifier based on a two-dimensional material

Researchers from TU Wien, AMO GmbH, University of Pisa and Wuppertal University have realized the first operational amplifier based on the two-dimensional semiconductor MoS2, reaching a key milestone towards the vision of a flexible electronics all based on two dimensional materials. This result has just appeared in the journal Nature Electronics.