A scalable approach for MoS 2-field-effect transistors with low contact resistance
Researchers from AMO GmbH and the Chair for Electronic Devices at RWTH Aachen University have experimentally demonstrated a scalable technique for realizing field-effect transistors based on two-dimensional molybdenum disulfide (MoS2), with low contact resistance (about 9 kΩ·µm) and high on/off current ratios of 108. The approach is based on lateral heterostructures of MoS2 and […]
