Research team at AMO GmbH and RWTH Aachen University demonstrates for the first time the formation and dissolution of conductive filaments in 2D material-based memristors Aachen, Germany – A research team from AMO GmbH, RWTH Aachen University (Chair of Electronic Devices), and Forschungszentrum Jülich has made significant progress in understanding the dynamics of conductive filaments […]
🎉 Congratulations to Sofia Cruces (ELD) for the publication of her latest paper in ACS Publications‘ Nano Letters: “Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices”. This exciting work explores the coexistence of volatile and nonvolatile resistive switching in lateral MoS₂-based memristors with silver electrodes. The devices operate at low […]
Researchers from AMO GmbH and the Chair for Electronic Devices at RWTH Aachen University have experimentally demonstrated a scalable technique for realizing field-effect transistors based on two-dimensional molybdenum disulfide (MoS2), with low contact resistance (about 9 kΩ·µm) and high on/off current ratios of 108. The approach is based on lateral heterostructures of MoS2 and […]
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