Active-3D TRR404-B02

The TRR404 “Next Generation Electronics With Active Devices in Three Dimensions [Active-3D]” is a DFG-funded Collaborative Research Center/Transregio between Dresden University of Technology (TUD) and Rheinisch-Westfälische Technische Hochschule Aachen (RWTH Aachen). It aims at exploring a completely new approach for microelectronics technology, by integrating  active devices into the Back-End of Line (BEOL), providing logic, memory, and active interconnect functionality directly above the chip area

Active-3D brings together material scientists, electrical engineers, and computer scientists of TUD, RWTH Aachen and Gesellschaft für Angewandte Mikro- und Optoelektronik mbH (AMO) in Aachen, Forschungszentrum Jülich (FZJ), Max Planck Institute of Microstructure Physics Halle (MPI-MSP), Nanoelectronic Materials Laboratory gGmbH (NaMLab) in Dresden, and Ruhr-Universität Bochum (RUB).

Project B02 – 2D-FET and VCM-Device BEOL Integration

One of the key features that make the approach of the active-3D very rewarding is the fact that switching devices and memory devices can be placed in close vicinity. The role of this project is to evaluate the potential of full-BEOL 1T1R elements realized by co-integration of a 2D-FET and a VCM device. In this sense, B02 already demonstrates the BEOL combination of two new elements as a starting point for further phases of the TRR. Moreover, this basic element allows to realize energy-efficient matrix-vector-multiplication on crossbar-arrays of 1T1R elements exploiting Kirchhoff’s laws.

Project’s Principal Investigators: Dr. Susanne Hoffmann-Eifert (FZJ); Dr. Zhenxing Wang (AMO GmbH)