Cleanroom Technology

You are here: / / Cleanroom Technology

Cleanroom Technology

Nanolab AMICA

The Nanolab AMICA is a highly-flexible class 10 to 1000 cleanroom, equipped with advanced equipment for lithography and pattern transfer at the nanometer scale. It is the backbone of all our operations. The available portfolio of advanced manufacturing tools and processes enables us to meet the demands for high quality nanofabrication, rapid process adaptations and unconventional solutions.

Cleanroom Services

All of the equipment described below is available to customers and partners as part of our services. Please contact us directly if you are interested in a specific quote for a customized solution. By combining all the necessary equipment and processes, we can meet your specific requirements.

Contact

Download

Equipment and processes

LithographyDry EtchingDepositionThermal processesWet chemistryCharacterization
PreviousNext

Electron beam lithography

  • Raith EBPG 5200 e-beam system: 50/100 kV: single line resolution ~10 nm, dense line resolution ~25 nm, overlay up to ~10 nm, depending on markers, substrate and resist; up to 8″ wafer.
  • New Ultra-high Resolution E-Beam Lithography, Imagine and Nanoengineering System, Substrat: 6inch, Resolution: 10nm, Acceleration voltage: 20kV

Photolithography

  • Semi-automatic Mask Aligner / EVG – 420: 2 μm resolution, 6″ wafer.
  • i-Line Stepper / Canon – FPA 3000 i5+: 0.5 μm resolution, 6″ wafer only
  • Automatic resist coater and developer / EVG – 150: AZ MiR701, primer, AZ5214E, 8″ wafer
  • Automatic resist coater and developer / SÜSS MicroTec – RCD8 – dedicated for imprint and IL resists, 8″-wafer
  • Interference lithography system: 180 nm – 2.5 μm pitch; stitching-free grids, 8″ wafer

Nanoimprint lithography (NIL)

  • SCIL UV nanoimprint lithography system /SÜSS MicroTec – MA8 Gen3: 2″- 8″ wafer

EVG 420 6″ halb-automatischer Maskaligner

Dry-etching tools

  • Plasma Assisted Reactive Ion Etching (ICP-RIE) / Oxford Instruments – PlasmaLab System 100, ICP-RIE: automatic system; mainly chlorine and bromine based chemistry; process gases: HBr, Cl₂, CHF₃, O₂, N₂, Ar, 6″ wafer.
  • ICP-RIE/ Oxford Instruments – PlasmaLab System 100: automated 2-system; mainly chlorine and bromine-based chemistry; process gases: HBr, BCl₃, Cl₂, C₄F₈, CHF₃, CF₄, SF₆, O₂, N₂, Ar, He, 6″ wafer.
  • ICP-RIE/ Oxford Instruments – PlasmaLab System 100: automated system; mainly fluorine-based chemistry; process gases: HBr, BCl₃, Cl₂, C₄F₈, CHF₃, CF₄, SF₆, O₂, N₂, Ar, He, 8″ wafer
  • Plasma etcher / Tepla – Semi 300: Batch and single wafer processing; O₂ and CF₄ processes, 6″ wafer

Thin-film deposition

  • Sputtering system – Creavac Creamet500s: single wafer system, DC and RF; materials: Au, Ti, TiN, Al, AlSi, SiO₂, Al₂O₃, etc.; process gases: Ar, N₂, O₂, 8″ wafer.
  • E-beam and resistive evaporator / FHR Star 200 EVA, single wafer system; materials: Au, Ti, TiN, Al, AlSi, SiO₂, Al₂O₃, etc.; process gases: N₂, 8″ wafers.
  • Plasma-enhanced chemical vapor deposition (PECVD) / Oxford-Instruments: deposition of graphene/graphite; up to 200 mm; plasma-enhanced (up to 850 °C, up to 3000 W) or thermal (up to 1200 °C); process gases: Ar, H₂, O₂, CH₄, 8″-wafer
  • New PlasmaPro 100 Nanofab (PECVD), Substrat: 8inch, Material: NCG
  • New PlasmaPro ASP (ALD), Substrat: 8inch, Material: Al2O3

Atomic Layer Deposition

  • ALD / Oxford Instruments – FlexAL, process: Al₂O₃, AlN, TiO₂, TiN, 8″ wafer
  • ALD / Oxford Instruments – Atomfab, process: Al₂O₃, AlN, 8″ wafer

Furnaces

  • Dry oxidation furnace / Centrotherm: 850-1050°C, layer thicknesses up to 300 nm, up to 200×6″ or up to 150×8″ wafers per run;
  • Wet oxidation furnace / Centrotherm: 1000-1050°C, layer thicknesses up to 3 μm, up to 200×6″ or up to 150×8″ wafers per run;
  • LP CVD furnace/ Centrotherm: stochiometric silicon nitride (Si3N4); 770°C; SiH2Cl2 and NH3 process; up to 500 nm; up to 25 wafers per run; sample size up to 15cm x15cm and 6″
  • LP CVD furnace/ Centrotherm, LTO (low temp. SiO2); 425 °C; SiH4 and O2 process; up to 500 nm, up to 25 wafers per run; 9 samples (max. 2×2 cm)
  • LP CVD furnace /Centrotherm: polysilicon; 620°C; SiH4 process; up to 500 nm, up to 25 wafers per run

Annealing

  • Rapid Thermal Annealing / Jipelec – JetFirst: up to 1100°C; process gases: H2, N2, Ar; up to 6″ wafer.
  • Annealing furnace/ Centrotherm – Verticoo Mini: annealing at 300-850°C in forming gas atmosphere; process gases: N2, N2/H2

Wet Chemistry

  • Wet bench for imprint processes / Arias: wet bench, single wafer, batch and samples; cleaning and resist processes, up to 8″-wafer
  • Lithography wet bench / Arias: single wafer, batch and samples; cleaning and resist processes, up to 8″ wafers
  • Standard cleaning / Arias: single wafer and batch; cleaning processes, up to 8″ wafers

Characterization

  • Scanning Electron Microscope / ZEISS – Supra 60VP: 8″ wafer
  • Ellipsometer / Philips – PQ Ruby: wavelengths: 632, 1301 and 1541 nm; automated mappings, 8″ wafer
  • Spectral Ellipsometer / J.A. Woollam: Wavelengths: UV-Vis; single-wafer processing, 6″ wafers
  • Optical Microscope / Leica – INM 100: Image Acquisition, 6″ Wafer
  • Optical microscope / Leica – INM 300: image acquisition, 8″ wafer
  • Atomic Force Microscope / Veeco – Dimension 3100: High resolution STM, AFM, MFM; 6″ wafer
  • Atomic Force Microscope / Bruker Icon: AFM, scan range: (100×100) μm² up to (500×500) nm² (recommended); up to 1024 pixels; surface topography scan; electrical measurements; conductive measurements; KPFM; magnetic measurements; special applications require special samples; 8″ wafer
  • Spectrometer / Bruker – Lambda 1050, spectral range: 200 – 2500 nm, transmission and reflectance, max. 10×10 cm², min 3×3 cm² (2×2 cm² possible with holder), 10×10 cm²
  • Raman spectroscopy system / Horiba, 3 wavelengths 532 nm, 633 nm, 785 nm, 50x 100x objectives, confocal setup, single points, 2D, 3D, 6″ wafer
  • Surface Profiler / Veeco – DekTak³ST, z-resolution~20nm, vertical range 100A-1310kA,
  • Semi-automatic Electrical Probe Station / Cascade Microtech, Agilent, Cascade Microtech: high-end parameter analyzer for testing DC nanoelectronic devices with small signals; Agilent Precision Impedance Analyzer (4294A); Agilent Semiconductor Parameter Analyzer (4156B); Agilent pA-Meter (4140B); Agilent Precision LCR-Meter (4284A); heating stage up to 300 °C, 8″ wafer
  • Lakeshore CRX-6.5 probe station, temperature range 6K-350K, 3 and 4 DC probe needles, 2″ wafer
  • Lakeshore CRX-6.5 probe station, temperature range 10K-650K, 3 DC probe needles, optical fiber, 2″ wafer
  • Optical-measurements setup: test silicon photonics devices; @1300 nm and 1550 nm; tunable laser; fiber butt coupled, 8″ wafer
  • RF lab: testing electro-optic devices; DC and RF, 8″ wafer