Research
Highlights of the Graphene Electronics Group
A selection of the most important results of AMO’s Graphene Electronics group.
2022
Demonstration of an effective method to increase the stability of two-dimensional transistors
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
T. Knobloch, B. Uzlu, Y. Yu. I.llarionov, Z. Wang, M. Otto, L. Filipovic, M. Waltl, D. Neumaier, M. C. Lemme, and T. Grasser
Nature Electronics 5, 356–366 (2022).2021
Demonstration of a novel flexible energy harvester
Terahertz Rectennas on Flexible Substrates Based on One-Dimensional Metal–Insulator–Graphene Diodes
A. Hemmetter, X. Yang, Z. Wang, M. Otto, B. Uzlu, M. Andree, U. Pfeiffer, A. Vorobiev, J. Stake, M. C. Lemme, and D. Neumaier
ACS Appl. Electron. Mater. 2021, 3, 9, 3747–37532020
Demonstration of nonvolatile resistive switches in nanocrystalline molybdenum disulfide.
Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion‐Based Plasticity
M. Belete, S. Kataria, A. Turfanda, S. Vaziri, T. Wahlbrink, O. Engström, M. C. Lemme
Adv. Electron. Mater. 2020, 1900892.2018
Realization of an ultrasensitive pressure sensor
Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films
S. Wagner, C. Yim, N. McEvoy, S. Kataria, V. Yokaribas, A. Kuc, S. Pindl, C.-P. Fritzen, T. Heine, G. S. Duesberg, and M. C. Lemme
Nano Letters 18, 3738 (2018).2017
Realization of a waveguide-integrated variable attenuator for 850 nm light
Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
Mohsin, D. Schall, M. Otto, B. Chmielak, C. Porschatis, J. Bolten, and D. Neumaier
Optics Express 25, 31660 (2017).2015
Realization of an Hall sensor with record-high sensitivity
Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
J. Dauber, A. A. Sagade, M. Oellers, K. Watanabe, T. Taniguchi, D. Neumaier, and C. Stampfer
Appl. Phys. Lett. 106, 193501 (2015).2014
Fabrication of an ultrafast photodetector on a silicon photonics platform
50 GBit/s photodetectors based on wafer-scale graphene for integrated silicon photonic communication systems
D. Schall, D. Neumaier, M. Mohsin, B. Chmielak, J. Bolten, C. Porschatis, A. Prinzen, C. Matheisen, W. Kuebart, B. Junginger, W. Templ, A. L. Giesecke, and H. Kurz
ACS Photonics 1, 781 (2014).2007
Realization of the first graphene-based transistor
A Graphene Field-Effect Device
M. C. Lemme, T. J. Echtermeyer, M. Baus and H. Kurz
IEEE Electron Device Letters, 28, 282 (2007).