Conduction and switching mechanisms in boron-nitride threshold memristors with nickel electrodes
Researchers from RWTH Aachen University, AMO GmbH and Research Center Jülich have performed a detailed study of hBN based threshold memristors with nickel electrodes. Analyzing temperature-dependent transport measurements and high-resolution TEM images, they propose the formation and retraction of nickel filaments along boron defect in the h-BN film as the resistive switching mechanism. The study […]