Conduction and switching mechanisms in boron-nitride threshold memristors with nickel electrodes

Researchers from RWTH Aachen University, AMO GmbH and Research Center Jülich have performed a detailed study of hBN based threshold memristors with nickel electrodes. Analyzing temperature-dependent transport measurements and high-resolution TEM images, they propose the formation and retraction of nickel filaments along boron defect in the h-BN film as the resistive switching mechanism. The study […]

How to report and benchmark emerging field-effect transistors

RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have been published as a Perspective Article in Nature Electronics.

Healing Achilles heel of two-dimensional transistors

Researchers from TU Wien, AMO GmbH, RWTH Aachen University and Wuppertal University have demonstrated a novel approach to enhance the electrical stability of two-dimensional transistors.

2D materials for next generation computing

In a compact comment published in Nature Communications, Max Lemme and colleagues outline the most promising fields of applications of two-dimensional (2D) materials, as well as the challenges that still need to be solved to see the appearance of high-tech products enabled by 2D-materials.

A new paradigm of THz-energy harvester based on graphene

Researchers from AMO GmbH, RWTH Aachen University, Chalmers University and the University of Wuppertal have developed a novel type of flexible energy harvester that shows good prospects for powering wearable and conformal devices. The work has been published open-access on ACS Applied Electronic Materials.

A scalable method for the large-area integration of 2D materials

Two-dimensional (2D) materials have a huge potential for providing devices with much smaller size and extended functionalities with respect to what can be achieved with today’s silicon technologies. But to exploit this potential we must be able to integrate 2D materials into semiconductor manufacturing lines – a notoriously difficult step. A team of researchers from […]

Combining high responsivity and low power consumption in graphene-based photodetectors

Researchers from AMO GmbH, ICFO- Institut de Ciencies Fotoniques, RWTH Aachen University, and Bergishe Universität Wuppertal have developed a novel approach for graphene-based photodetectors that allows combining high responsivity and low power consumption, thus circumventing one of the major limitations of state-of-the-art photodetectors based on graphene – namely the high power-consumption caused by their large […]

The first operational amplifier based on a two-dimensional material

Researchers from TU Wien, AMO GmbH, University of Pisa and Wuppertal University have realized the first operational amplifier based on the two-dimensional semiconductor MoS2, reaching a key milestone towards the vision of a flexible electronics all based on two dimensional materials. This result has just appeared in the journal Nature Electronics.

Nanoelectromechanical sensors based on 2D materials – a review

Max Lemme and co-workers have recently published a review article on nanoelectromechanical (NEMS) sensors based on suspended two-dimensional (2D) materials in the journal RESEARCH, an open-access multidisciplinary journal launched in 2018 as the first journal in the Science Partner Journal (SPJ) program. The paper is an invited contribution to a special issue on “Progress and […]

Insulators for 2D nanoelectronics: the gap to bridge

A review article on one of the most delicate issues of future electronics based on 2D materials A team of scientists led by Tibor Grasser and Yuri Illarionov of TU Wien, including RWTH Professor and AMO Director Max Lemme, has published an extensive review of the current search for suitable insulators for two-dimensional (2D) nanoelectronics […]