Posts

How to report and benchmark emerging field-effect transistors

RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have been published as a Perspective Article in Nature Electronics.

Healing Achilles heel of two-dimensional transistors

Researchers from TU Wien, AMO GmbH, RWTH Aachen University and Wuppertal University have demonstrated a novel approach to enhance the electrical stability of two-dimensional transistors.